Gallium Nitride (GaN) is a wide bandgap compound semiconductor formed by the combination of Gallium and Nitrogen with an atomic structure of quartzite crystal. In contrast to Silicon Carbide (SiC) power devices that have been around for quite a while, GaN power devices have just started to appear on the market. In this episode, we are taking a look at a comparative study  between Gallium Nitride vs. Silicon in soft switching.  Silicon and GaN-based devices are compared on different factors and tested with different switching frequencies to explore the best uses for each technology. This episode is based on a white paper created in collaboration with Würth Elektronik and STMicroelectronics, and first shared on All About Circuits. 

Visit Wurth Elektronik online- www.we-online.com  

Visit STMicro online- www.stmicro.com 

Visit All About Circuits online- https://www.allaboutcircuits.com/partner-content-hub/wuerth-elektronik-eisos-gmbh-co-kg/gan-vs-silicon-in-soft-switching-a-comparative-study/